User profiles for TSUYOSHI HASEGAWA
Tsuyoshi HASEGAWAProfessor, Dept. Applied Physics, Waseda University Verified email at waseda.jp Cited by 13289 |
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Memory is believed to occur in the human brain as a result of two types of synaptic plasticity:
short-term plasticity (STP) and long-term potentiation (LTP; refs 1 , 2 , 3 , 4 ). In …
short-term plasticity (STP) and long-term potentiation (LTP; refs 1 , 2 , 3 , 4 ). In …
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
…, M Moors, K Skaja, V Rana, T Hasegawa… - Nature …, 2016 - nature.com
A detailed understanding of the resistive switching mechanisms that operate in redox-based
resistive random-access memories (ReRAM) is key to controlling these memristive devices …
resistive random-access memories (ReRAM) is key to controlling these memristive devices …
[PDF][PDF] Learning abilities achieved by a single solid‐state atomic switch
At present, computers are digital ‘‘von Neumann’’architectures, with sequential operations of
logical processing and memory.[1] Recently, a nonvolatile logic circuit [2] was proposed to …
logical processing and memory.[1] Recently, a nonvolatile logic circuit [2] was proposed to …
A nonvolatile programmable solid-electrolyte nanometer switch
…, M Mizuno, H Kawaura, T Hasegawa… - IEEE Journal of Solid …, 2005 - ieeexplore.ieee.org
A reconfigurable LSI employing a nonvolatile nanometer-scale switch, NanoBridge, is
proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte …
proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte …
Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch
Quantized conductance was observed in a cation-migration-based resistive switching memory
cell with a simple metal–insulator–metal (MIM) structure using a thin Ta 2 O 5 layer. The …
cell with a simple metal–insulator–metal (MIM) structure using a thin Ta 2 O 5 layer. The …
[BOOK][B] Racing the enemy: Stalin, Truman, and the surrender of Japan
T Hasegawa - 2005 - degruyter.com
… Tsuyoshi Hasegawa sheds fascinating new light on fiercely debated issues including the
US-… With this book, Tsuyoshi Hasegawa will establish himself as the expert on the end of the …
US-… With this book, Tsuyoshi Hasegawa will establish himself as the expert on the end of the …
Atomic switch: Atom/ion movement controlled devices for beyond Von‐Neumann computers
An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and
their reduction/oxidation processes in the switching operation to form/annihilate a conductive …
their reduction/oxidation processes in the switching operation to form/annihilate a conductive …
Guideline of surgical management based on diffusion of descending necrotizing mediastinitis
S Endo, F Murayama, T Hasegawa… - The Japanese Journal of …, 1999 - Springer
Background: Descending necrotizing mediastinitis resulting from oropharyngeal abscess, is
a serious, life-threatening infection. Exisiting strategies for surgical management, such as …
a serious, life-threatening infection. Exisiting strategies for surgical management, such as …
Effects of moisture on the switching characteristics of oxide‐based, gapless‐type atomic switches
Resistive switching memories based on the formation and dissolution of a metal filament in
a simple metal/oxide/metal structure are attractive because of their potential high scalability, …
a simple metal/oxide/metal structure are attractive because of their potential high scalability, …
Generic relevance of counter charges for cation-based nanoscale resistive switching memories
Resistive switching memories (ReRAMs) are the major candidates for replacing the state-of-the-art
memory technology in future nanoelectronics. These nonvolatile memory cells are …
memory technology in future nanoelectronics. These nonvolatile memory cells are …